INTERACTION OF IMPURITY ATOMS Ni and Cu ON ELECTROPHYSICAL PROPERTIES OF SILICON SENSORS
Keywords:
silicon, chemical deposition, nickel diffusion, resistivity, heat treatment, strain gauges, defect, method.Abstract
The conductivity and lifetime of nonequilibrium charge carriers of nickel impurity in strain gauges made of single-crystal silicon are determined. The optimal mode of the diffusion process is established. It is shown that the generation of thermal donors is suppressed by the interaction of nickel impurities and oxygen introduced at 500 °C, and it is proven that this interaction does not affect the formation of high-temperature thermal donors formed at 700 °C.
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